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Nanostructuring of ultra-thin HfO2 layers for high-k/III-V device applicationmore_vert
Nanostructuring of ultra-thin HfO2 layers for high-k/III-V device applicationclose

Nanostructuring of ultra-thin HfO2 layers for high-k/III-V device application

tipo de documento Publicacion

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Autores: Álvaro, Raquel, Tejedor Jorge, Paloma, Anguita, José, Molina Aldereguia, Jon, Benedicto Córdoba, Marcos, Galiana Blanco, Beatriz

Etiquetas: sem, high-k, mosfet, nanotecnología, nanotechnology, transistores, eds, rie, transistors, ebl, tem, iii-v, afm

Nanoscale selective plasma etching of ultrathin HfO2 layers for advanced complementary metal-oxide-semiconductor devicesmore_vert
Nanoscale selective plasma etching of ultrathin HfO2 layers for advanced complementary metal-oxide-semiconductor devicesclose

Nanoscale selective plasma etching of ultrathin HfO2 layers for advanced complementary metal-oxide-semiconductor devices

tipo de documento Publicacion

...

Autores: Álvaro, Raquel, Tejedor Jorge, Paloma, Anguita, José, Benedicto Córdoba, Marcos, Galiana Blanco, Beatriz

Etiquetas: icp-rie, lithogaphy, high-k, nanotecnología, litografía, nanotechnology, transistores, transistors, afm, iii-v