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Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS applicationmore_vert
Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS applicationclose

Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

tipo de documento Publicacion

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Autores: Tejedor Jorge, Paloma, Cherkaoui, K., Molina Aldereguia, Jon, Vázquez Burgos, Luís, Benedicto Córdoba, Marcos, Monaghan, S., Hurley, P.K., Galiana Blanco, Beatriz

Etiquetas: hrsem, high-k, linl, hfo2, tem. eds, nanotecnología, transistor, nanotechnology, rie, gaas, afm, iii-v

Nanostructuring of ultra-thin HfO2 layers for high-k/III-V device applicationmore_vert
Nanostructuring of ultra-thin HfO2 layers for high-k/III-V device applicationclose

Nanostructuring of ultra-thin HfO2 layers for high-k/III-V device application

tipo de documento Publicacion

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Autores: Álvaro, Raquel, Tejedor Jorge, Paloma, Anguita, José, Molina Aldereguia, Jon, Benedicto Córdoba, Marcos, Galiana Blanco, Beatriz

Etiquetas: sem, high-k, mosfet, nanotecnología, nanotechnology, transistores, eds, rie, transistors, ebl, tem, iii-v, afm