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Modified energetic and growth kinetics on H-terminated GaAs (110more_vert
Modified energetic and growth kinetics on H-terminated GaAs (110close

Modified energetic and growth kinetics on H-terminated GaAs (110

tipo de documento Publicacion

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Autores: Teichert, C., Benedicto Córdoba, Marcos, Lorbek, S., Diez Merino, Laura, Hlawacek, G., Galiana Blanco, Beatriz

Etiquetas: ffm, transistor, crecimiento, growth, simulación, nanotecnología, nanotechnology, gaas, simulation, mbe, afm

Step-step interactions on GaAs(110) nanopatternsmore_vert
Step-step interactions on GaAs(110) nanopatternsclose

Step-step interactions on GaAs(110) nanopatterns

tipo de documento Publicacion

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Autores: Tejedor Jorge, Paloma, Benedicto Córdoba, Marcos, Galiana Blanco, Beatriz

Etiquetas: growth, transistor, simulación, crecimiento, nanotecnología, nanotechnology, gaas, simulation, afm

Structural investigation of MOVPE-grown GaAs on Ge by x-ray techniquesmore_vert
Structural investigation of MOVPE-grown GaAs on Ge by x-ray techniquesclose

Structural investigation of MOVPE-grown GaAs on Ge by x-ray techniques

tipo de documento Publicacion

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Autores: Bennet, N.S., Wong, C.S., Molina Aldereguia, Jon, Benedicto Córdoba, Marcos, Mcnally, P.J., Galiana Blanco, Beatriz

Etiquetas: ge, xrt sincrotron, xrd, movpe, xrt synchrotron, nanotecnología, nanotechnology, gaas, afm

Thermal stability of HfO2-on-GaAs nanopatternsmore_vert
Thermal stability of HfO2-on-GaAs nanopatternsclose

Thermal stability of HfO2-on-GaAs nanopatterns

tipo de documento Publicacion

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Autores: Tejedor Jorge, Paloma, Molina Aldereguia, Jon, Vázquez Burgos, Luís, Benedicto Córdoba, Marcos, Galiana Blanco, Beatriz

Etiquetas: recocido, hfo2, high-k, transistor, nanotecnología, nanotechnology, eds, patterns, gaas, patrones, afm, iii-v, tem, annealing

Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS applicationmore_vert
Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS applicationclose

Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

tipo de documento Publicacion

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Autores: Tejedor Jorge, Paloma, Cherkaoui, K., Molina Aldereguia, Jon, Vázquez Burgos, Luís, Benedicto Córdoba, Marcos, Monaghan, S., Hurley, P.K., Galiana Blanco, Beatriz

Etiquetas: hrsem, high-k, linl, hfo2, tem. eds, nanotecnología, transistor, nanotechnology, rie, gaas, afm, iii-v

Nanostructuring of ultra-thin HfO2 layers for high-k/III-V device applicationmore_vert
Nanostructuring of ultra-thin HfO2 layers for high-k/III-V device applicationclose

Nanostructuring of ultra-thin HfO2 layers for high-k/III-V device application

tipo de documento Publicacion

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Autores: Álvaro, Raquel, Tejedor Jorge, Paloma, Anguita, José, Molina Aldereguia, Jon, Benedicto Córdoba, Marcos, Galiana Blanco, Beatriz

Etiquetas: sem, high-k, mosfet, nanotecnología, nanotechnology, transistores, eds, rie, transistors, ebl, tem, iii-v, afm

Nanoscale selective plasma etching of ultrathin HfO2 layers for advanced complementary metal-oxide-semiconductor devicesmore_vert
Nanoscale selective plasma etching of ultrathin HfO2 layers for advanced complementary metal-oxide-semiconductor devicesclose

Nanoscale selective plasma etching of ultrathin HfO2 layers for advanced complementary metal-oxide-semiconductor devices

tipo de documento Publicacion

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Autores: Álvaro, Raquel, Tejedor Jorge, Paloma, Anguita, José, Benedicto Córdoba, Marcos, Galiana Blanco, Beatriz

Etiquetas: icp-rie, lithogaphy, high-k, nanotecnología, litografía, nanotechnology, transistores, transistors, afm, iii-v