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Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS applicationmore_vert
Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS applicationclose

Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

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Autores: Tejedor Jorge, Paloma, Cherkaoui, K., Molina Aldereguia, Jon, Vázquez Burgos, Luís, Benedicto Córdoba, Marcos, Monaghan, S., Hurley, P.K., Galiana Blanco, Beatriz

Etiquetas: hrsem, high-k, linl, hfo2, tem. eds, nanotecnología, transistor, nanotechnology, rie, gaas, afm, iii-v